Name: TPW1R104PB,L1XHQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-TPW1R104PBL1XHQTR-ND
Price: 2.07 CAD
Availability: OutOfStock

TPW1R104PB,L1XHQ is out of stock and can be placed on backorder.

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TPH1R104PB,L1XHQ

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: $2.68000

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPW1R104PB,L1XHQ
DigiKey Part Number	264-TPW1R104PBL1XHQTR-ND - Tape & Reel (TR) 264-TPW1R104PBL1XHQCT-ND - Cut Tape (CT) 264-TPW1R104PBL1XHQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPW1R104PB,L1XHQ
Description	MOSFET N-CH 40V 120A 8DSOP
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 120A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-DSOP Advance
Datasheet	Datasheet
EDA/CAD Models	TPW1R104PB,L1XHQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.14mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Operating Temperature	175°C
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN
Base Product Number	TPW1R104