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TO-220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK65E10N1,S1X

DigiKey Part Number
TK65E10N1S1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK65E10N1,S1X
Description
MOSFET N CH 100V 148A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 148A (Ta) 192W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK65E10N1,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVIII-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
148A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5400 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK65E10
Product Questions and Answers

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0 In Stock
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Quantity
All prices are in CAD
Tube
QuantityUnit PriceExt Price
1$5.20000$5.20
50$2.25900$112.95
100$2.24420$224.42
500$2.23550$1,117.75
1,000$2.14008$2,140.08
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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