TK45P03M1,RQ(S Toshiba | Single

TK45P03M1,RQ(S is Obsolete and no longer manufactured.

Available Substitutes:

Similar

TPN8R903NL,LQ

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: $0.99000

Datasheet

Similar

FDD8880

onsemi

In Stock: 0

Unit Price: $1.76000

Datasheet

Similar

IPD090N03LGATMA1

Infineon Technologies

In Stock: 0

Unit Price: $0.92000

Datasheet

Similar

IPD30N03S4L09ATMA1

Infineon Technologies

In Stock: 4

Unit Price: $1.73000

Datasheet

Similar

NTD4909NT4G

onsemi

In Stock: 0

Unit Price: $1.37000

Datasheet

Similar

NTD4969NT4G

onsemi

In Stock: 0

Unit Price: $1.22000

Datasheet

Similar

STD40NF03LT4

STMicroelectronics

In Stock: 0

Unit Price: $0.00000

Datasheet

View and Compare All Substitutes

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK45P03M1,RQ(S
DigiKey Part Number	TK45P03M1RQ(S-ND - Tape & Reel (TR)
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK45P03M1,RQ(S
Description	MOSFET N-CH 30V 45A DPAK
Customer Reference
Detailed Description	N-Channel 30 V 45A (Ta) Surface Mount DPAK
Datasheet	Datasheet
EDA/CAD Models	TK45P03M1,RQ(S Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI-H
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.7mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	TK45P03