Name: IPP330P10NMAKSA1
Brand: Infineon Technologies
SKU: 448-IPP330P10NMAKSA1-ND
Price: 7.05 CAD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP330P10NMAKSA1
DigiKey Part Number	448-IPP330P10NMAKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP330P10NMAKSA1
Description	TRENCH >=100V PG-TO220-3
Manufacturer Standard Lead Time	14 Weeks
Customer Reference
Detailed Description	P-Channel 100 V 6.9A (Ta), 62A (Tc) 3.8W (Ta), 300W (Tc) Through Hole PG-TO220-3
Datasheet	Datasheet
EDA/CAD Models	IPP330P10NMAKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	33mOhm @ 53A, 10V
Vgs(th) (Max) @ Id	4V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs	236 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP330P